Электронная библиотека (репозиторий) Томского государственного университета
статьи в журналах | Sarkisov, Sergey Yu.

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Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description: GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of ... More
Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description: GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub ... More
Source: Journal of optics. 2017. Vol. 19, № 11. P. 115503 (1-7)
Type: статьи в журналах
Date: 2017
Description: Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−x S x crystals with a relatively low (x = 0.04) and high (x = 0.29) content of s ... More
Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description: The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor ... More
Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description: The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method ... More
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Source: Russian physics journal. 2015. Vol. 58, № 8. P. 1181-1185
Type: статьи в журналах
Date: 2015
Description: Thin amorphous SiO2, TiO2, and Ga2O3 films were deposited on the surface of GaSe crystals by thermal and magnetron sputtering. It was found that under different technological conditions, the SiO2 and ... More
Source: Journal of physics and chemistry of solids. 2013. Vol. 74, № 9. P. 1240-1248
Type: статьи в журналах
Date: 2013
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