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Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description:
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of
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Source: International journal of modern physics B. 2021. Vol. 35, № 27. P. 2150273-1-2150273-14
Type: статьи в журналах
Date: 2021
Description:
GaSe nanoflakes on silicon substrates covered by SiO2 films are prepared by mechanical exfoliation from the bulk Bridgman-grown GaSe crystals using a scotch tape. The thickness of SiO2 films on Si sub
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Source: Известия высших учебных заведений. Физика. 2020. Т. 63, № 9. С. 50-54
Type: статьи в журналах
Date: 2020
Description:
Нанослои GaSe и InSe получены на подложках из кремния методами механического отслоения и осаждения из паровой фазы. С помощью атомно-силовой микроскопии исследована морфология поверхностей и определен
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Source: Journal of optics. 2017. Vol. 19, № 11. P. 115503 (1-7)
Type: статьи в журналах
Date: 2017
Description:
Terahertz wave generation through optical rectification of femtosecond laser pulses and its detection in GaSe and GaSe1−x S x crystals with a relatively low (x = 0.04) and high (x = 0.29) content of s
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Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description:
The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor
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Source: Optics express. 2015. Vol. 23, № 25. P. 32820-32834
Type: статьи в журналах
Date: 2015
Description:
High optical quality nonlinear crystals of solid solution GaSe1−xSx, x=0, 0.05, 0.11, 0.22, 0.29, 0.44, 1 were grown by modified Bridgman method with heat field rotation. Ordinary and extraordinary wa
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Authors:
Guo, Jin |
Li, Dian-Jun |
Yang, Gui-Long |
Chen, Fei |
Wang, Chun-Rui |
Zhang, Lai-Ming |
Andreev, Yury M. |
Kokh, Konstantin A. |
Lanskii, Grigory V. |
Xie, Ji-Jiang |
Svetlichnyi, Valerii A.
Source: Light: Science & Applications. 2015. Vol. 4. P. e362 (1-12)
Type: статьи в журналах
Date: 2015
Description:
In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able t
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Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description:
The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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Source: Bulletin of the Russian Academy of Sciences: Physics. 2015. Vol. 79, № 2. P. 238-241
Type: статьи в журналах
Date: 2015
Description:
GaSe crystals with 0, 0.07, 0.38, 0.67, 2.07, 3, and 5 wt % Te are grown. GaSe:Te (≤2.07 wt %) crystals are suitable for nonlinear optics applications. The optimum doping level is 0.07 wt %. This mini
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Source: Materials Chemistry and Physics. 2015. Vol. 154. P. 152-157
Type: статьи в журналах
Date: 2015
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101T-1-98101T-10
Type: статьи в журналах
Date: 2015
Description:
Model study of not phase matched and phase matched optical rectification or down-conversion of Ti:Sapphire laser pulses at 950 nm into THz and far-IR range in pure and S-doped GaSe single crystals is
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 981012-1-981012-10
Type: статьи в журналах
Date: 2015
Description:
Ab-initio study on modification of commerce terahertz spectrometer with time resolution Z-3 (Zomega, USA) by substitution of ZnTe and GaP detectors and LT-GaAs generator for homemade of pure and S-dop
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Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description:
The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00
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Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98101P-1-98101P-7
Type: статьи в журналах
Date: 2015
Description:
Design of top S-doped GaSe growth technology is completed. New methods for characterization of high optical quality crystals are proposed that allowed selection optimally doped crystals. Frequency con
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