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Source: Russian physics journal. 2021. Vol. 63, № 9. P. 1504-1509
Type: статьи в журналах
Date: 2021
Description:
GaSe and InSe nanolayers were obtained by mechanical exfoliation and physical vapor deposition methods on silicon substrates. Employing atomic force microscopy the surface morphology and thickness of
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Source: Известия высших учебных заведений. Физика. 2020. Т. 63, № 9. С. 50-54
Type: статьи в журналах
Date: 2020
Description:
Нанослои GaSe и InSe получены на подложках из кремния методами механического отслоения и осаждения из паровой фазы. С помощью атомно-силовой микроскопии исследована морфология поверхностей и определен
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Source: Physics of the solid state. 2015. Vol. 57, № 9. P. 1735-1740
Type: статьи в журналах
Date: 2015
Description:
The dielectric functions, refractive indices, and extinction coefficients of GaSe and InSe layered crystals have been calculated within the density functional theory. The calculations have been perfor
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Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description:
Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h
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Source: Физика твердого тела. 2015. Т. 57, Вып. 9. С. 1693-1697
Type: статьи в журналах
Date: 2015
