Электронная библиотека (репозиторий) Томского государственного университета

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Source: Инноватика - 2018 : сборник материалов XIV Международной школы-конференции студентов, аспирантов и молодых ученых, 26-27 апреля 2018 г., г. Томск, Россия. Томск, 2018. С. 125-128
Type: статьи в сборниках
Date: 2018
Description: The article is devoted to a non-contact method for measuring the resistivity of semiconductor
Type: монографии
Date: 2018
Description: В монографии на основе оригинальных представлений последовательно и всесторонне обсуждены различные аспекты природы электрофизических явлений структур с барьером Шоттки на GaAs. Внедрение в промышленн ... More
Source: Semiconductors. 2016. Vol. 50, № 2. P. 171-179
Type: статьи в журналах
Date: 2016
Description: Halogen (F, Cl, Br, and I) adsorption at an As-stabilized GaAs (001) surface with the β2–(2 × 4) reconstruction is studied using the plane-wave projected-augmented wave method. The effect of halogens ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 24137 (1-6)
Type: статьи в журналах
Date: 2016
Description: We report an ab initio study of the effect of hydrostatic pressure and uniaxial strain on electronic properties of KNa2Bi, a cubic bialkali bismuthide. It is found that this zero-gap semimetal with an ... More
Source: Infrared physics and technology. 2015. Vol. 71. P. 236-241
Type: статьи в журналах
Date: 2015
Description: Metal–insulator–semiconductor structures based on n-Hg1−xCdxTe (x = 0.19–0.25) were grown by molecular-beam epitaxy on the GaAs (0 1 3) substrates. Near-surface graded-gap layers with high CdTe conten ... More
Source: Journal of solid state chemistry. 2015. Vol. 232. P. 67-72
Type: статьи в журналах
Date: 2015
Description: The influence of van der Waals interactions on the lattice parameters, band structure, elastic moduli and binding energy of layered GaSe compound has been studied using projector-augmented wave method ... More
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Source: Russian physics journal. 2015. Vol. 57, № 9. P. 1287-1293
Type: статьи в журналах
Date: 2015
Description: Within the limits of a linear model based on processing of data of direct calibration measurements with semiconductor multisensors, a method of their calibration by standard levels of gas concentratio ... More
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Source: Semiconductors. 2015. Vol. 49, № 3. P. 298-304
Type: статьи в журналах
Date: 2015
Description: Using As2S3 and AsS2 glasses as an example, the principal possibility of using positron annihilation spectroscopy methods for studying the evolution of the free volume of hollow nanoobjects in chalcog ... More
Source: Journal of physics: Condensed matter. 2015. Vol. 27, № 2. P. 025801 (1-8)
Type: статьи в журналах
Date: 2015
Description: The electron energy relaxation in semiconductors and insulators after high-level external excitation is analysed by a semi-classical approach based on a kinetic equation of the Boltzmann type. We show ... More
Source: Bulletin of the Lebedev Physics Institute. 2015. Vol. 42, № 4. P. 107-109
Type: статьи в журналах
Date: 2015
Description: The spectral features of the energy structure of Co2+, Ni2+, and Fe2+ ions in semiconductor materials ZnO, ZnS, ZnSe, ZnTe, CdO, CdS, CdSe, CdTe and the relation of these structures to the band gap ar ... More
Source: Atomic and Molecular Pulsed Lasers : 12 International Conference, September 14-18, 2015, Tomsk, Russia : abstracts. Tomsk, 2015. P. 121
Type: статьи в сборниках
Date: 2015
Source: Фотоника-2015 : Российская конференция по актуальным проблемам полупроводниковой фотоэлектроники (с участием иностранных ученых), 12-16 октября 2015 г., Новосибирск : тезисы докладов. Новосибирск, 2015. С. 99
Type: статьи в сборниках
Date: 2015
Source: Известия высших учебных заведений. Физика. 2015. Т. 58, № 8/2. С. 271-273
Type: статьи в журналах
Date: 2015

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