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Authors:
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Świątek, Zbigniew |
Morgiel, Y. |
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Fitsych, Olena I. |
Varavin, Vasilii S.
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2867-2871
Type: статьи в журналах
Date: 2020
Description:
Bright-field and high-resolution transmission electron microscopy and microdiffraction have been used for the study of defects in two HgTe/HgCdTe single quantum well (QW) structures grown by molecular
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Authors:
Fitsych, Olena I. |
Świątek, Zbigniew |
Morgiel, Y. |
Bonchyk, A. Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Voytsekhovskiy, Alexander V. |
Korotaev, Alexander G. |
Yakushev, Maxim V. |
Marin, Denis V. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Izhnin, Igor I.
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description:
Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op
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Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Fitsych, Olena I. |
Savytskyy, Hrygory V. |
Świątek, Zbigniew
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description:
Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo
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Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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