Authors: Kokhanenko, Andrey P. | Akimenko, Nataliya Yu. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.

Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302

Type: статьи в журналах

Date: 2020

Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of

Authors: Izhnin, Igor I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Dirko, Vladimir V.

Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2527-2533

Type: статьи в журналах

Date: 2020

Description: In the present paper, for the first time, the influence of interactions between 3D islands during epitaxial growth of quantum dots by Stranski–Krastanov mechanism is considered in the frames of kineti ... More

Authors: Korotaev, A. G. | Kokhanenko, Andrey P. | Dirko, Vladimir V. | Voytsekhovskiy, Alexander V. | Lozovoy, Kirill A.

Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)

Type: статьи в журналах

Date: 2020

Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered

Authors: Lloyd, Adam | Smith, Roger | Lozovoy, Kirill A. | Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Zhoua, Ying

Source: Surface science. 2020. Vol. 696. P. 121594 (1-9)

Type: статьи в журналах

Date: 2020

Description: The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using