Электронная библиотека (репозиторий) Томского государственного университета

Add to Quick Collection   All 84 Results

Showing items 1 - 15 of 84.
Sort:
 Add All Items to Quick Collection
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 296-302
Type: статьи в журналах
Date: 2020
Description: Epitaxial growth of germanium quantum dots on an oxidized silicon surface is considered. A kinetic model of
Source: Surface and coatings technology. 2020. Vol. 384. P. 125289 (1-5)
Type: статьи в журналах
Date: 2020
Description: Nowadays, two-dimensional crystals (2D materials) and structures with quantum dots (0D materials) are considered
Source: Current applied physics. 2020. Vol. 20, № 7. P. 877-882
Type: статьи в журналах
Date: 2020
Description: The paper is devoted to optical testing of mid-infrared Ge/Si photodetectors obtained by stacking of self-assembled
Source: Surface science. 2020. Vol. 696. P. 121594 (1-9)
Type: статьи в журналах
Date: 2020
Description: The initial stages of the growth of germanium on the dimer reconstructed Si(100) surface is modelled using
Source: Journal of physics D: Applied physics. 2020. Vol. 53, № 33. P. 335105 (1-7)
Type: статьи в журналах
Date: 2020
Description: Surface plasmon waves and Rayleigh anomaly are characteristic optical phenomena exhibited
Source: Известия высших учебных заведений. Физика. 2020. Т. 63, № 2. С. 104-109
Type: статьи в журналах
Date: 2020
Description: Рассматривается эпитаксиальный рост квантовых точек германия на окисленной поверхности кремния. Предложена кинетическая модель зарождения и роста трехмерных островков по механизму Фольмера – Вебера в ... More
Source: Nanotechnology. 2018. Vol. 29, № 5. P. 054002 (1-7)
Type: статьи в журналах
Date: 2018
Description: In this paper theoretical modeling of formation and growth of germanium–silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with ... More
Source: Russian physics journal. 2018. Vol. 60, № 11. P. 1871-1879
Type: статьи в журналах
Date: 2018
Description: A comparative analysis is carried out of the growth peculiarities under molecular-beam epitaxy of germanium quantum dots on the silicon surfaces with different crystallographic orientations Si(100) an ... More
Source: Surface science. 2018. Vol. 669. P. 45-49
Type: статьи в журналах
Date: 2018
Description: Nowadays using of tin as one of the deposited materials in GeSi/Sn/Si, GeSn/Si and GeSiSn/Si material systems is one of the most topical problems. These materials are very promising for various applic ... More
Source: Opto-electronics review. 2018. Vol. 26, № 3. P. 195-200
Type: статьи в журналах
Date: 2018
Description: In this paper questions of optimization of growth conditions in the method of molecular beam epitaxy for creation of high-efficient quantum dot infrared photodetectors are considered. As a model mater ... More
Source: XXV Международная научно-техническая конференция и школа по фотоэлектронике и приборам ночного видения, 24-26 мая 2018 г., Москва, Россия : труды конференции. М., 2018. Т. 2 : Стендовые доклады. С. 486-489
Type: статьи в сборниках
Date: 2018
Source: Optoelectronics, instrumentation and data processing. 2017. Vol. 53, № 2. P. 190-196
Type: статьи в журналах
Date: 2017
Description: This paper demontstrates the possibility of developing a high-voltage waveguide photodetector comprised of Schottky diodes and based on a Au/Ge — Si structure with Ge quantum dots pseudomorphic to a s ... More
Source: International journal of quantum information. 2017. Vol. 15, № 01. P. 1750006 (1-14)
Type: статьи в журналах
Date: 2017
Description: Recently, an implementation of a universal set of one- and two-quantum-bit gates for quantum computation using spin states of coupled single-electron quantum dots was proposed. It was demonstrated tha ... More
Source: Nanoscale research letters. 2017. Vol. 12. P. 131 (1-5)
Type: статьи в журналах
Date: 2017
Description: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quan ... More

Date

^