Authors: Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Izhnin, Igor I. | Mynbaev, Karim D. | Yakushev, Maxim V. | Mikhailov, Nikolay N. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, Denis V. | Fitsych, Olena I. | Kurbanov, Kurban R.

Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008

Type: статьи в сборниках

Date: 2020

Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.

Source: Russian physics journal. 2023. Vol. 65, № 10. P. 1716-1731

Type: статьи в журналах

Date: 2023

Description: The paper, which consists of two parts, considers in detail the method of discrete mobility spectrum analysis (DMSA) proposed by the authors as well as its application to determine the parameters of c ... More

Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Kurbanov, K. R. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Izhnin, Igor I. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy

Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295

Type: статьи в журналах

Date: 2020

Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam

Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Fitsych, Olena I. | Świątek, Zbigniew | Jakiela, Rafal

Source: Journal of electronic materials. 2021. Vol. 50, № 6. P. 3714-3721

Type: статьи в журналах

Date: 2021

Description: Accumulation of arsenic implantation-induced donor defects in heteroepitaxial Hg1−xCdxTe structures with the composition of the active layer xa = 0.30 was studied with the use of the Hall-efect measur ... More

Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.

Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354

Type: статьи в сборниках

Date: 2018

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D.

Source: Russian physics journal. 2023. Vol. 65, № 9. P. 1538-1554

Type: статьи в журналах

Date: 2023

Description: The paper consisting of two parts presents a detailed consideration of the proposed method of discrete mobility spectrum analysis and its application for studying the parameters of charge carriers in ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, O. I. | Pociask-Bialy, Malgorzata | Mynbaev, Karim D.

Source: Opto-electronics review. 2017. Vol. 25, № 2. P. 148-170

Type: статьи в журналах

Date: 2017

Description: Analysis is performed of the contemporary views on the effect of ion etching (ion-beam milling and reactive ion etching) on physical properties of HgCdTe and on the mechanisms of the processes respons ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Fitsych, Olena I. | Pociask-Bialy, Malgorzata | Dvoretsky, Sergei A. | Mynbaev, Karim D.

Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207

Type: статьи в журналах

Date: 2015

Description: Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto ... More

Authors: Fitsych, Olena I. | Świątek, Zbigniew | Morgiel, Y. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Yakushev, Maxim V. | Marin, Denis V. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Izhnin, Igor I.

Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17

Type: статьи в журналах

Date: 2019

Description: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Fitsych, Olena I. | Savytskyy, Hrygory V. | Świątek, Zbigniew

Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757

Type: статьи в журналах

Date: 2018

Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Świątek, Zbigniew | Morgiel, Jerzy | Fitsych, Olena I. | Varavin, Vasilii S. | Marin, Denis V. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V.

Source: Applied nanoscience. 2022. Vol. 12, № 3. P. 395-401

Type: статьи в журналах

Date: 2022

Description: Bright–feld and high-resolution transmission electron microscopy were used for nano-scale structural studies of defects induced by implantation of arsenic ions with 190 keV energy and 1014 cm–2 fuence ... More

Authors: Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Izhnin, Igor I.

Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235

Type: статьи в журналах

Date: 2019

Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More

Authors: Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, G. V. | Mynbaev, Karim D. | Fitsych, Olena I.

Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165

Type: статьи в журналах

Date: 2015

Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More

Authors: Izhnin, A. I. | Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Gorn, Dmitriy Igorevich | Semakova, A. A. | Bazhenov, N. L. | Mynbaev, Karim D. | Zegrya, G. G. | Izhnin, Igor I.

Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 617-622

Type: статьи в журналах

Date: 2019

Description: Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures wer ... More

Authors: Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Y. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G. | Mynbaev, Karim D. | Fitsych, Olena I. | Varavin, Vasilii S. | Bonchyk, A. Yu. | Dvoretsky, Sergei A. | Marin, Denis V. | Yakushev, Maxim V.

Source: Applied nanoscience. 2019. Vol. 9, № 5. P. 725-730

Type: статьи в журналах

Date: 2019

Description: Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface l ... More