Электронная библиотека (репозиторий) Томского государственного университета
детекторы рентгеновского излучения

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Add   Characterisation of the HEXITEC4S X-ray spectroscopic imaging detector incorporating through-silicon via (TSV) technology
Authors: Veale, Matthew C. | Booker, P. | Church, I. | Jones, L. L. | Lipp, J. | Schneider, Andreas | Seller, Paul H. | Wilson, Matthew D. | Chsherbakov, Ivan | Kolesnikova, Irina I. | Lozinskaya, Anastassiya D. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, Andrei N.
Source: Nuclear instruments and methods in physics research Section A: accelerators, spectrometers, detectors and associated equipment. 2022. Vol. 1025. P. 166083 (1-9)
Type: статьи в журналах
Date: 2022
Description: In this paper a new version of the HEXITEC spectroscopic imaging technology is presented. The HEXITEC ASIC maintains the same pixel electronics but, unlike the previous design, contains no I/O pads on ... More
Add   Influence of temperature on the energy resolution of sensors based on HR GaAs:Cr
Authors: Lozinskaya, Anastassiya D. | Veale, Matthew C. | Kolesnikova, Irina I. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Wheater, R. M. | Zarubin, Andrei N.
Source: Journal of instrumentation : electronic journal. 2021. Vol. 16, № 2. P. P02026 (1-8)
Type: статьи в журналах
Date: 2021
Description: HR GaAs:Cr is a well known material, used for room-temperature X-ray detector applications. While GaAs:Cr detectors have typically shown good performance at 25oC, there may be benefits of running the ... More
Add   The influence of contact material and its fabrication on X-ray HR-GaAs:Cr sensor noise characteristics
Authors: Chsherbakov, P. | Kolesnikova, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Chsherbakov, I.
Source: Journal of instrumentation : electronic journal. 2019. Vol. 14, № 1. P. C01026 (1-7)
Type: статьи в журналах
Date: 2019
Description: In this research the HR-GaAs:Cr sensors noise characteristics were investigated by means of amplitude spectrum analysis. Noise characteristics of HR-GaAs:Cr sensors with different metal contacts were ... More
Add   Characterization of 4 inch GaAs:Cr wafers
Authors: Budnitsky, D. | Lozinskaya, A. D. | Kolesnikova, I. | Zarubin, A. N. | Shemeryankina, A. | Mikhailov, T. | Skakunov, M. S. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Novikov, Vladimir A.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 1. P. C01063 (1-7)
Type: статьи в журналах
Date: 2017
Description: Producing of large area matrix detectors based on semiconductor materials with high atomic number suitable for the registration of the synchrotron radiation of high intensity in the photon energy rang ... More
Add   Electron mobility-lifetime and resistivity mapping of GaAs:Cr wafers
Authors: Chsherbakov, I. | Lozinskaya, A. D. | Mihaylov, T. | Novikov, Vladimir A. | Shemeryankina, A. | Tolbanov, Oleg P. | Tyazhev, Anton V. | Zarubin, A. N. | Kolesnikova, I.
Source: Journal of instrumentation : electronic journal. 2017. Vol. 12, № 2. P. C02016 (1-8)
Type: статьи в журналах
Date: 2017
Description: Previous works onchromium compensated gallium arsenide (GaAs:Cr) have shown high efficiency, good spatial and energy resolution, which is obviously connected with the high quality of material itself. ... More
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