Электронная библиотека (репозиторий) Томского государственного университета
Remesnik, V. G. | Mynbaev, Karim D.

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Add   Localization and nature of radiation donor defects in the arsenic implanted CdHgTe films grown by MBE
Authors: Fitsych, Olena I. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Mynbaev, Karim D. | Kurbanov, K. R. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Izhnin, Igor I. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Add   Arsenic-ion implantation-induced defects in HgCdTe films studied with Hall-effect measurements and mobility spectrum analysis
Authors: Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Korotaev, Alexander G. | Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Świątek, Zbigniew | Morgiel, Jerzy | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Izhnin, Igor I.
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Add   Electrical profiling of arsenic-implanted HgCdTe films performed with discrete mobility spectrum analysis
Authors: Syvorotka, I. I. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Marin, D. V. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Mynbaev, Karim D. | Izhnin, Igor I. | Voytsekhovskiy, Alexander V. | Korotaev, A. G.
Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Add   Distribution profiles of radiation donor defects in arsenic-implanted HgCdTe films
Authors: Izhnin, Igor I. | Syvorotka, I. I. | Korotaev, A. G. | Mynbaev, Karim D. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Remesnik, V. G. | Yakushev, Maxim V. | Voytsekhovskiy, Alexander V.
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
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