The investigation of the pulse height distribution and X-ray sensitivity depending on the contact material on high resistive chromium compensated gallium arsenide (HR GaAs:Cr) sensors is presented. Some samples had Cr/Ni contacts made using electron-beam deposition and some samples had In additionally alloyed into the contacts. Three different configuration of sensors were investigated: Ni/Cr - HR GaAs:Cr – Cr/Ni, In/Ni/Cr - HR GaAs:Cr – Cr/Ni/In and In/Ni/Cr - HR GaAs:Cr – Cr/Ni. Depending on the type of sensor there are differences in both the X-ray sensitivity and pulse height distribution depending on X-ray intensity. Ni/Cr - HR GaAs:Cr – Cr/Ni – structures have shown sublinear sensitivity dependence to intensity, while In/Ni/Cr - HR GaAs:Cr – Cr/Ni/In are characterized by superlinear dependence holding everything else constant. The results and possible causes are discussed in this paper.