Электронная библиотека (репозиторий) Томского государственного университета
фотодетекторы

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Add   Dependence of Ge/Si avalanche photodiode performance on the thickness and doping concentration of the multiplication and absorption layers
Authors: Deeb, Hazem | Khomyakova, Kristina I. | Kokhanenko, Andrey P. | Douhan, Rahaf M. H. | Lozovoy, Kirill A.
Source: Inorganics. 2023. Vol. 11, № 7. P. 303 (1-15)
Type: статьи в журналах
Date: 2023
Description: In this article, the performance and design considerations of the planar structure of germanium on silicon avalanche photodiodes are presented. The dependences of the breakdown voltage, gain, andwidth ... More
Add   Dark current and detectivity of multilayer Ge/Si photodetector with quantum dots
Authors: Douhan, Rahaf M. H. | Kokhanenko, Andrey P. | Lozovoy, Kirill A.
Source: Pulsed lasers and laser applications AMPL-2021 : the 15th International conference, September 12-17, 2021, Tomsk, Russia : abstracts. Tomsk, 2021. P. 19-20
Type: статьи в сборниках
Date: 2021
Description: Since the demonstration of molecular beam epitaxy which widened the ability to establish more applications based on semiconductor materials, and after the big success of quantum well structures for in ... More
Add   Theoretical and experimental comparison of multilayer Ge/Si photodetectors with quantum dots
Authors: Douhan, Rahaf M. H. | Kokhanenko, Andrey P. | Lozovoy, Kirill A. | Deeb, Hazem
Source: Актуальные проблемы радиофизики АПР-2021 : 9-я Международная научно-практическая конференция, 20-22 октября 2021 года, г. Томск : сборник трудов конференции. Томск, 2021. С. 223-224
Type: статьи в сборниках
Date: 2021
Description: The work discusses multilayer infrared photodetectors with quantum dots of germanium on silicon. It compares the theoretical calculations results of the dark current density of multilayer photodetecto ... More
Add   Photodetectors and solar cells with GeSi quantum dots parameters dependence on growth conditions
Authors: Lozovoy, Kirill A. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Voytsekhovskiy, Alexander V.
Source: International Journal of Nanotechnology. 2015. Vol. 12, № 3/4. P. 209-217
Type: статьи в журналах
Date: 2015
Add   Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices
Authors: Voytsekhovskiy, Alexander V. | Kokhanenko, Andrey P. | Satdarov, Vadim G. | Pchelyakov, Oleg P. | Nikiforov, Alexander I. | Lozovoy, Kirill A.
Source: Opto-electronics review. 2014. Vol. 22, № 3. P. 171-177
Type: статьи в журналах
Date: 2014
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