Authors: Voytsekhovskiy, Alexander V. | Izhnin, Igor I. | Mynbaev, Karim D. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Yakushev, Maxim V. | Korotaev, A. G. | Sidorov, Georgiy Yu.

Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)

Type: статьи в журналах

Date: 2020

Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn

Authors: Izhnin, Igor I. | Mynbaev, Karim D. | Voytsekhovskiy, Alexander V. | Nesmelov, Sergey N. | Dzyadukh, Stanislav M. | Fitsych, Olena I. | Varavin, Vasilii S. | Dvoretsky, Sergei A. | Mikhailov, Nikolay N. | Korotaev, A. G. | Yakushev, Maxim V. | Bonchyk, A. Yu. | Savytskyy, Hrygory V. | Świątek, Zbigniew | Morgiel, Jerzy

Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)

Type: статьи в журналах

Date: 2020

Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation

Authors: Voytsekhovskiy, Alexander V. | Dzyadukh, Stanislav M. | Izhnin, Igor I. | Nesmelov, Sergey N.

Source: Journal of Physics: Conference Series. 2017. Vol. 830. P. 012081 (1-4)

Type: статьи в журналах

Date: 2017

Description: The effect of ion implantation of boron ions with an energy of 100 keV and a dose of (1-6)×1015 cm-2 in the MBE HgCdTe films on the characteristics of the MIS structures based on these films was inves ... More