Электронная библиотека (репозиторий) Томского государственного университета
Mikhailov, Nikolay N.

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Source: Semiconductor science and technology. 2019. Vol. 34, № 3. P. 035009 (1-7)
Type: статьи в журналах
Date: 2019
Description: The results from the electrical profiling of an n-on-p junction formed by 190-keV arsenic ion implantation in an indium/vacancy–doped Hg0.78Cd0.22Te film are presented. Mobility spectrum analysis in c ... More
Source: Materials research express. 2019. Vol. 6, № 7. P. 075912 (1-8)
Type: статьи в журналах
Date: 2019
Description: In this paper experimental results of research of boron ion implantation into Hg1−x Cd x Te epitaxial films of various compositions x are presented. Samples of epitaxial films were grown by the method ... More
Source: Russian physics journal. 2018. Vol. 60, № 10. P. 1752-1757
Type: статьи в журналах
Date: 2018
Description: Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1–x Te (x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were perfo ... More
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 354
Type: статьи в сборниках
Date: 2018
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description: Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri ... More
Source: Materials physics and mechanics. 2014. Vol. 21. P. 112-118
Type: статьи в журналах
Date: 2014
Source: Nuclear instruments and methods in physics research B. 2012. Vol. 272. P. 313-317
Type: статьи в журналах
Date: 2012
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