Электронная библиотека (репозиторий) Томского государственного университета

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Add   Physical mechanisms of the influence of γ-ray surface treatment on the characteristics of close AuNi/n–n+-GaN Schottky contacts
Authors: Torkhov, Nikolay A. | Gradoboev, Alexandr V. | Budnyaev, Vadim A. | Ivonin, Ivan V. | Novikov, Vadim A.
Source: Semiconductor science and technology. 2022. Vol. 37, № 105005
Type: статьи в журналах
Date: 2022
Description: The results obtained here suggest that low-dose Co-60 gamma-irradiation (D-gamma similar to 140 Gy) has a complex effect on close AuNi/n-n(+)-GaN{0001} Schottky contacts. This manifests in the disappe ... More
Add   Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures
Authors: Torkhov, Nikolay A. | Gradoboev, Alexandr V. | Orlova, K. N. | Toropov, A. S.
Source: Semiconductor science and technology. 2022. Vol. 37, № 5. P. 055023
Type: статьи в журналах
Date: 2022
Description: The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R (SH) , R (SK) , rho and geometrical parameter L (T) ... More
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