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Authors:
Izhnin, Igor I. |
Korotaev, A. G. |
Fitsych, Olena I. |
Bonchyk, Oleksandr Yu. |
Savytskyy, Hrygory V. |
Mynbaev, Karim D. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Yakushev, Maxim V. |
Voytsekhovskiy, Alexander V. |
Jakiela, Rafal |
Trzyna, Malgorzata
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Type: статьи в журналах
Date: 2017
Description:
Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical
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Source: Opto-electronics review. 2015. Vol. 23, № 3. P. 200-207
Type: статьи в журналах
Date: 2015
Description:
Studies of background donor concentration (BDC) in HgCdTe samples grown with different types of technology were performed with the use of ion milling as a means of eliminating the compensating accepto
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Authors:
Izhnin, Igor I. |
Voytsekhovskiy, Alexander V. |
Korotaev, A. G. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Mikhailov, Nikolay N. |
Yakushev, Maxim V. |
Bonchyk, A. Yu. |
Savytskyy, G. V. |
Mynbaev, Karim D. |
Fitsych, Olena I.
Source: Infrared physics and technology. 2015. Vol. 73. P. 158-165
Type: статьи в журналах
Date: 2015
Description:
Results of experimental studies of long-term (∼7 years) stability of electron concentration in HgCdTe-based p–n junctions fabricated with ion etching (IE) are presented. The stability was studied duri
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Source: Journal of applied physics. 2014. Vol. 115, № 16. P. 163501-1-163501-7
Type: статьи в журналах
Date: 2014
Authors:
Izhnin, A. I. |
Mynbaev, Karim D. |
Bazhenov, N. L. |
Shilyaev, A. V. |
Mikhailov, Nikolay N. |
Varavin, Vasilii S. |
Dvoretsky, Sergei A. |
Fitsych, Olena I. |
Voytsekhovskiy, Alexander V. |
Izhnin, Igor I.
Source: Opto-electronics review. 2013. Vol. 21, № 4. P. 390-394
Type: статьи в журналах
Date: 2013
