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Source: Journal of the American Chemical Society. 2019. Vol. 141, № 4. P. 1628-1635
Type: статьи в журналах
Date: 2019
Description:
Metal–semiconductor contacts are key components of nanoelectronics and atomic-scale integrated circuits. In these components Schottky diodes provide a low forward voltage and a very fast switching rat
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Source: Russian physics journal. 2018. Vol. 60, № 11. P. 2040-2043
Type: статьи в журналах
Date: 2018
Description:
A kinetic model of the formation of pyramid-like bulges (pedestals) at the bases of vertical nanowires is proposed. The formation of the pedestals at the early stage of the nanowire growth is assumed
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Source: ACS Applied materials & interfaces. 2018. Vol. 10, № 31. P. 26772-26780
Type: статьи в журналах
Date: 2018
Description:
The physisorbed (precursor) and chemisorbed states of a molecule on metal surfaces can be utilized to build a logic switch at the single-molecule level, enabling further microminiaturization of electr
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Source: The journal of physical chemistry letters. 2017. Vol. 8, № 6. P. 1235-1240
Type: статьи в журналах
Date: 2017
Description:
The design of novel elementary surface processes is important for applications in catalysis, single-molecule junctions, molecular sensors, switches, and surface-mounted molecular machines. Here we dem
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Source: Materials science forum. 2015. Vol. 821/823. P. 363-366
Type: статьи в журналах
Date: 2015
Description:
The absolute surface energies of three major low index surfaces of cubic silicon carbide (3C-SiC) are determined by first-principles density functional theory calculations. Calculations show that amon
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Source: Nanoscale research letters. 2015. Vol. 10. P. 421 (1-6)
Type: статьи в журналах
Date: 2015
Description:
Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni
Source: Journal of crystal growth. 2015. Vol. 427. P. 60-66
Type: статьи в журналах
Date: 2015
Description:
Radial growth of vertically aligned nanowires involves formation and propagation of monoatomic steps at atomically smooth nanowire sidewalls. Here we study the step dynamics with a step flow model tak
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Source: Surface science. 2013. Vol. 609. P. 157-160
Type: статьи в журналах
Date: 2013
Source: Nature communications. 2013. Vol. 4, Art. № 2569. P. 1-6
Type: статьи в журналах
Date: 2013
Source: Physical Review B. 2012. Vol. 85, № 4. P. 045423-1-045423-7
Type: статьи в журналах
Date: 2012
Source: Physical Review Letters. 2012. Vol. 108, № 11. P. 116101-1-116101-5
Type: статьи в журналах
Date: 2012