Электронная библиотека (репозиторий) Томского государственного университета
топологические изоляторы

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Source: Magnetism. 2022. Vol. 2, № 1. P. 1-9
Type: статьи в журналах
Date: 2022
Description: Thin films of magnetic topological insulators (TIs) are expected to exhibit a quantized anomalous Hall effect when the magnetizations on the top and bottom surfaces are parallel and a quantized topolo ... More
Source: Международная конференция "Физическая мезомеханика. Материалы с многоуровневой иерархически организованной структурой и интеллектуальные производственные технологии", 6-10 сентября 2021 г., Томск, Россия : тезисы докладов. Томск, 2021. С. 345
Type: статьи в сборниках
Date: 2021
Source: Physical Review B. 2018. Vol. 97, № 20. P. 205113-1-205113-6
Type: статьи в журналах
Date: 2018
Description: We have grown the phase-homogeneous ternary compound with composition Bi2Te1.85S1.15 very close to the stoichiometric Bi2Te2S. The measurements performed with spin- and angle-resolved photoelectron sp ... More
Source: Международная конференция "Перспективные материалы с иерархической структурой для новых технологий и надежных конструкций" ; X Международная конференция "Химия нефти и газа" : тезисы докладов. Томск, 2018. С. 851
Type: статьи в сборниках
Date: 2018
Source: Nano letters. 2018. Vol. 18, № 10. P. 6521-6529
Type: статьи в журналах
Date: 2018
Description: Magnetic proximity effect at the interface between magnetic and topological insulators (MIs and TIs) is considered to have great potential in spintronics as, in principle, it allows realizing the quan ... More
Source: New journal of physics. 2018. Vol. 20, № 6. P. 063035 (1-8)
Type: статьи в журналах
Date: 2018
Description: The layered polar semiconductor BiTeI exhibits large Rashba-type spin–orbit splittings in its bulk and surface electronic structure. Here we report an artificial structural modification near the surfa ... More
Source: Scientific Reports [Еlectronic resource]. 2016. Vol. 6. P. 20734 (1-7)
Type: статьи в журналах
Date: 2016
Description: Strong topological insulators (TIs) support topological surfaces states on any crystal surface. In contrast, a weak, time-reversal-symmetry-driven TI with at least one non-zero v1, v2, v3 ℤ2 index sho ... More
Source: Physical Review B. 2015. Vol. 91, № 8. P. 075307-1-075307-9
Type: статьи в журналах
Date: 2015
Description: In the frame of k⋅p method and variational approach for the effective energy functional of a contact between a three-dimensional topological insulator (TI) and normal insulator (NI), we analytically d ... More
Source: Nano letters. 2015. Vol. 15, № 3. P. 2061-2066
Type: статьи в журналах
Date: 2015
Description: We report tunable in-plane anisotropic magnetoresistance (AMR) in nanodevices based on topological insulator
Source: Physical Review B. 2015. Vol. 92, № 4. P. 045134-1-045134-7
Type: статьи в журналах
Date: 2015
Description: We report the bulk and surface electronic properties and spin polarization of a rich family of Sn-based ternary topological insulators studied by means of first-principles calculations within the fram ... More
Source: Journal of Electron Spectroscopy and Related Phenomena. 2014. Vol. 195. P. 258-262
Type: статьи в журналах
Date: 2014
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