Электронная библиотека (репозиторий) Томского государственного университета
Dvurechenskii, A. V.

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Source: Applied physics letters. 2018. Vol. 112, № 17. P. 171107-1-171107-5
Type: статьи в журналах
Date: 2018
Description: The photodetection improvement previously observed in mid-infrared (IR) quantum dot photodetectors (QDIPs) coupled with periodic metal metasurfaces is usually attributed to the surface light trapping ... More
Source: Applied physics letters. 2015. Vol. 106, № 3. P. 032104-1-032104-4
Type: статьи в журналах
Date: 2015
Description: We report on intraband photocurrent spectroscopy of dome-shaped GeSi islands embedded in a Si matrix with n+-type bottom and top Si layers. An in-plane polarized photoresponse in the 85–160 meV energy ... More
Source: Applied physics letters. 2015. Vol. 107, № 21. P. 213502-1-213502-4
Type: статьи в журналах
Date: 2015
Description: We study the effect of quantum dot size on the mid-infrared photo- and dark current, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot ... More
Source: Journal of experimental and theoretical physics letters. 2015. Vol. 101, № 11. P. 750-753
Type: статьи в журналах
Date: 2015
Description: Electronic states in multilayer Ge/Si heterostructures with different periods of the arrangement of layers of Ge quantum dots have been studied by the photocurrent spectroscopy method. It has been fou ... More
Source: Journal of experimental and theoretical physics letters. 2015. Vol. 102, № 9. P. 594-598
Type: статьи в журналах
Date: 2015
Description: We study the effect of quantum dot size on the mid-infrared photocurrent, photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot heterostructures. The dot dimensions ... More
Source: Physical Review B. 2014. Vol. 90, № 3. P. 035430-1-035430-6
Type: статьи в журналах
Date: 2014
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