Электронная библиотека (репозиторий) Томского государственного университета
электрофизические свойства

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Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Source: 6th International congress on energy fluxes and radiation effects (EFRE 2018), September 16-22, 2018, Tomsk, Russia : abstracts. Tomsk, 2018. P. 349
Type: статьи в сборниках
Date: 2018
Source: Proceedings of SPIE. 2015. Vol. 9810 : XII International Conference on Atomic and Molecular Pulsed Lasers, 13–18 September 2015, Tomsk, Russian Federation. P. 98100U-1-98100U-6
Type: статьи в журналах
Date: 2015
Description: The purpose of this paper was investigating the effect of volume nanosecond discharge in air at atmospheric pressure on the electro-physical properties of the HgCdTe (MCT) epitaxial films grown by mol ... More
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