Электронная библиотека (репозиторий) Томского государственного университета

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Source: 2020 7th International Congress on energy fluxes and radiation effects (EFRE 2020), Tomsk, Russia, September 14 – 26, 2020 : proceedings. [S. l.], 2020. P. 1004-1008
Type: статьи в сборниках
Date: 2020
Description: Processes of accumulation and annealing of radiation-induced donor defects in arsenic-implanted Hg0.7Cd0.3Te films were studied with the use of the Hall-effect measurements with processing the data wi ... More
Source: Russian physics journal. 2020. Vol. 63, № 3. P. 432-445
Type: статьи в журналах
Date: 2020
Description: The results of studying the admittance of unipolar barrier structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates are presented. Using passivation with an Al2O3 insu ... More
Source: Semiconductor science and technology. 2020. Vol. 35, № 5. P. 055026 (1-7)
Type: статьи в журналах
Date: 2020
Description: Metal-insulator-semiconductor (MIS) structures were fabricated by depositing an Al2O3 dielectric on
Source: Surface and coatings technology. 2020. Vol. 392. P. 125760 (1-5)
Type: статьи в журналах
Date: 2020
Description: Metal–insulator–semiconductor (MIS) structures based on HgCdTe were fabricated after various stages of pn
Source: Infrared physics and technology. 2020. Vol. 109. P. 103388 (1-7)
Type: статьи в журналах
Date: 2020
Description: Optical reflectance in the visible wavelength range, transmission electron microscopy, and the Hall-effect measurements with mobility spectrum analysis have been used for the direct comparison of the ... More
Source: Applied nanoscience. 2020. Vol. 10, № 8. P. 2489-2494
Type: статьи в журналах
Date: 2020
Description: Hg1−xCdxTe grown by molecular beam epitaxy including HgTe single quantum well (SQW) with thickness of 6.5 nm were
Source: Surface and coatings technology. 2020. Vol. 393. P. 125721 (1-5)
Type: статьи в журналах
Date: 2020
Description: Results of the Hall-effect studies of surface properties of n–type HgCdTe films modified with arsenic ion implantation
Source: Physica status solidi B. 2020. Vol. 257, № 5. P. 1900598 (1-5)
Type: статьи в журналах
Date: 2020
Description: Transmission electron microscopy (TEM) is used for the study of interfaces in two HgTe/HgCdTe single quantum-well (QW) structures grown by molecular beam epitaxy on GaAs substrates. The studies are co ... More
Source: Journal of electronic materials. 2020. Vol. 49, № 5. P. 3202-3208
Type: статьи в журналах
Date: 2020
Description: Heteroepitaxial n-Hg0.78Cd0.22Te films with near-surface graded-gap layers
Source: Russian physics journal. 2020. Vol. 63, № 2. P. 290-295
Type: статьи в журналах
Date: 2020
Description: By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam
Source: Surface and coatings technology. 2020. Vol. 387. P. 125527 (1-5)
Type: статьи в журналах
Date: 2020
Description: In this work the results of the experimental investigation of the influence of the high-frequency nanosecond
Source: Materials research express. 2019. Vol. 6, № 11. P. 116411 (1-7)
Type: статьи в журналах
Date: 2019
Description: The admittance of nBn structures based on HgCdTe grown by molecular beam epitaxy (MBE) on GaAs (013) substrates was studied. The measurements were performed in the temperature range of 10–310 K at the ... More
Source: Infrared physics and technology. 2019. Vol. 98. P. 230-235
Type: статьи в журналах
Date: 2019
Description: The Hall-effect/electrical conductivity measurements and mobility spectrum analysis (MSA) have been used for the study of the profiles of different electron species and corresponding defects induced i ... More
Source: Journal of communications technology and electronics. 2019. Vol. 64, № 3. P. 289-293
Type: статьи в журналах
Date: 2019
Description: The capacitance–voltage (CV) curves of metal–insulator–semiconductor (MIS) systems based on an HgCdTe nBn structure grown by molecular-beam epitaxy on GaAs(013) substrates were studied for the first t ... More
Source: Opto-electronics review. 2019. Vol. 27, № 1. P. 14-17
Type: статьи в журналах
Date: 2019
Description: Effect of annealing on the structural properties of arsenic-implanted mercury cadmium telluride film grown by molecular beam epitaxy was studied with the use of transmission electron microscopy and op ... More
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