Электронная библиотека (репозиторий) Томского государственного университета
электронные свойства

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Add   Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Add   On the charge neutrality level and the electronic properties of interphase boundaries in the layered ε-GaSe semiconductor
Authors: Brudnyi, Valentin N. | Sarkisov, Sergey Yu. | Kosobutsky, Alexey V.
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Add   On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level
Authors: Brudnyi, Valentin N. | Ermakov, V. S. | Kolin, N. G. | Korulin, A. V. | Boiko, V. M.
Source: Semiconductors. 2015. Vol. 49, № 6. P. 763-766
Type: статьи в журналах
Date: 2015
Description: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown ... More
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