Электронная библиотека (репозиторий) Томского государственного университета

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Source: Russian physics journal. 2020. Vol. 62, № 9. P. 1656-1662
Type: статьи в журналах
Date: 2020
Description: The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN
Source: Semiconductor science and technology. 2020. Vol. 35, № 8. P. 085021 (1-5)
Type: статьи в журналах
Date: 2020
Description: The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
Source: Russian physics journal. 2018. Vol. 61, № 1. P. 187-190
Type: статьи в журналах
Date: 2018
Description: The results of an investigation of Mg diffusion in blue LED structures with InGaN/GaN quantum wells are presented for various growth temperatures of the p-GaN layer. The values of the diffusion coeffi ... More
Source: Physica status solidi A : applications and materials science. 2018. Vol. 215, № 8. P. 1700445 (1-5)
Type: статьи в журналах
Date: 2018
Description: Red and yellow AlGaInP/GaAs light‐emitting diodes (LEDs) with multiple quantum wells grown by the metalorganic chemical vapor deposition technique were irradiated at room temperature by 10 MeV electro ... More
Source: Semiconductor science and technology. 2018. Vol. 33, № 9. P. 095011 (1-8)
Type: статьи в журналах
Date: 2018
Description: The effects of fast neutron (up to 1.75 × 1020 f.n. cm–2) and fast plus thermal neutron (up to 3.5 × 1020 f.t.n. cm–2) irradiation on the electrical properties and crystal lattice of GaN films have be ... More
Source: Semiconductor science and technology. 2015. Vol. 30, № 11. P. 115019 (1-9)
Type: статьи в журналах
Date: 2015
Description: Density functional theory calculations have been applied to study the structural and electronic properties of layered epsilon-GaSe, γ-InSe, β-GaS and GaTe compounds. The optimized lattice parameters h ... More
Source: Russian physics journal. 2015. Vol. 57, № 11. P. 1604-1608
Type: статьи в журналах
Date: 2015
Description: The results of studies of blue LED InGaN/GaN heterostructures with a short-period InGaN/GaN superlattice in front of an active region of the structure grown on flat and patterned Al2O3 substrates are ... More
Source: Semiconductors. 2015. Vol. 49, № 10. P. 1307-1310
Type: статьи в журналах
Date: 2015
Description: The height of the (Au, Pd, Pt, Cu, Ag, Sn, In, Al, Mg, Ca, Li, Cs)/GaSe(0001) Schottky barrier as a function of the metal work function and the energy-band offsets in InSe(0001)/GaSe(0001) and GaSe(00 ... More
Source: Semiconductors. 2015. Vol. 49, № 6. P. 763-766
Type: статьи в журналах
Date: 2015
Description: The electronic properties and the limiting position of the Fermi level in p-GaSb crystals irradiated with full-spectrum reactor neutrons at up to a fluence of 8.6 × 1018 cm−2 are studied. It is shown ... More
Source: Journal of physics and chemistry of solids. 2013. Vol. 74, № 9. P. 1240-1248
Type: статьи в журналах
Date: 2013
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