Электронная библиотека (репозиторий) Томского государственного университета

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Source: Russian physics journal. 2020. Vol. 62, № 9. P. 1656-1662
Type: статьи в журналах
Date: 2020
Description: The effect of the proton, electron, gamma - rays, and fast neutron irradiation on the parameters of InAlN/GaN
Source: Semiconductor science and technology. 2020. Vol. 35, № 8. P. 085021 (1-5)
Type: статьи в журналах
Date: 2020
Description: The effect of 2 MeV electron bombardment up to total electron dose of 1×1019cm−2 on the
Source: Semiconductor science and technology. 2018. Vol. 33, № 9. P. 095011 (1-8)
Type: статьи в журналах
Date: 2018
Description: The effects of fast neutron (up to 1.75 × 1020 f.n. cm–2) and fast plus thermal neutron (up to 3.5 × 1020 f.t.n. cm–2) irradiation on the electrical properties and crystal lattice of GaN films have be ... More
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