Authors: Abramkin, Demid S. | Petrushkov, Mikhail O. | Bogomolov, Dmitrii B. | Emelyanov, Eugeny A. | Yesin, Michail Yu. | Vasev, Andrey V. | Bloshkin, Aleksei A. | Koptev, Eugeny S. | Putyato, Mikhail A. | Atuchin, Victor V. | Preobrazhenskii, Valery V.

Source: Nanomaterials. 2023. Vol. 13, № 5. P. 910 (1-20)

Type: статьи в журналах

Date: 2023

Description: In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods. The growth conditions for the SAQDs’ ... More

Authors: Petrushkov, Mikhail O. | Abramkin, Demid S. | Emelyanov, Eugeny A. | Putyato, Mikhail A. | Komkov, Oleg S. | Firsov, Dmitrii D. | Vasev, Andrey V. | Yesin, Michail Yu. | Bakarov, Askhat K. | Loshkarev, Ivan D. | Gutakovskii, Anton K. | Atuchin, Victor V. | Preobrazhenskii, Valery V.

Source: Nanomaterials. 2022. Vol. 12, № 24. P. 4449 (1-19)

Type: статьи в журналах

Date: 2022

Description: The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth a ... More

Authors: Abramkin, Demid S. | Atuchin, Victor V.

Source: Nanomaterials. 2022. Vol. 12, № 21. P. 3794 (1-20)

Type: статьи в журналах

Date: 2022

Description: Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories. The central g ... More