Properties of arsenic-implanted Hg1-xCdxTe MBE films

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Properties of arsenic-implanted Hg1-xCdxTe MBE films	699 KB	Adobe Acrobat PDF	View Details	Download
DOI Доступ к ресурсу на сайте издателя				10.1051/epjconf/201713301001

Title: Properties of arsenic-implanted Hg1-xCdxTe MBE films
Creator: Izhnin, Igor I.
Creator: Korotaev, A. G.
Creator: Fitsych, Olena I.
Creator: Bonchyk, Oleksandr Yu.
Creator: Savytskyy, Hrygory V.
Creator: Mynbaev, Karim D.
Creator: Varavin, Vasilii S.
Creator: Dvoretsky, Sergei A.
Creator: Yakushev, Maxim V.
Creator: Voytsekhovskiy, Alexander V.
Creator: Jakiela, Rafal
Creator: Trzyna, Malgorzata
Subject: пленки
акцепторные дефекты
молекулярно-лучевая эпитаксия
электрические свойства
Date: 2017
DOI: 10.1051/epjconf/201713301001
Description: Defect structure of arsenic-implanted Hg1-xCdxTe films (x=0.23–0.30) grown with molecular-beam epitaxy on Si substrates was investigated with the use of optical methods and by studying the electrical properties of the films. The structural perfection of the films remained higher after implantation with more energetic arsenic ions (350 keV vs 190 keV). 100%-activation of implanted ions as a result of post-implantation annealing was achieved, as well as the effective removal of radiation-induced donor defects. In some samples, however, activation of acceptor-like defects not related to mercury vacancies as a result of annealing was observed, possibly related to the effect of the substrate.

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collection(s): Радиофизический факультет
Сибирский физико-технический институт
Научное управление
Identifier: vtls:000577241
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000577241
Type: статьи в журналах
Source: EPJ Web of Conferences. 2017. Vol. 133. P. 01001 (1-4)
Language: eng

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Научное управление Properties of arsenic-implanted Hg1-xCdxTe MBE films