In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si

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In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si	1 MB	Adobe Acrobat PDF	View Details	Download
DOI Доступ к ресурсу на сайте издателя				10.1186/s11671-015-1131-9

Title: In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si
Creator: Hasegawa, Mika
Creator: Suto, Ryota
Creator: Sambonsuge, Shota
Creator: Teraoka, Yuden
Creator: Akitaka, Yoshigoe
Creator: Filimonov, Sergey N.
Creator: Hirokazu, Fukidome
Creator: Suemitsu, Maki
Creator: Sugawara, Kenta
Subject: графены
никель
силициды
карбиды
Date: 2015
DOI: 10.1186/s11671-015-1131-9
Description: Low-temperature (~1073 K) formation of graphene was performed on Si substrates by using an ultrathin (2 nm) Ni

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collection(s): Научное управление
Identifier: vtls:000552751
http://vital.lib.tsu.ru/vital/access/manager/Repository/vtls:000552751
Type: статьи в журналах
Source: Nanoscale research letters. 2015. Vol. 10. P. 421 (1-6)
Language: eng

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Научное управление In situ SR-XPS observation of Ni-assisted low-temperature formation of epitaxial graphene on 3C-SiC/Si